Thin film cadmium sulphide photoconductive cells were prepared on clean glass slides
by Chemical Bath Deposition (CBD). Copper (Cu) ions were used for doping. Cupric Chloride
(CuCl2) and Cadmium Chloride (CdCl2) were mixed with thiourea (CH4N2S) solution. Different
amounts of CuCl2 (0.1, 0.2, 0.3 and 0.4 % (molar)) were employed. The annealing temperatures
were 300 °C, 400 °C and 500 °C. The XRD analysis revealed that the as-deposited film showed
the cubic CdS phase but the hexagonal phase appeared at 300 °C and at higher temperatures. The
microstructure study showed that the grain size of 500 °C annealed 0.4 % Cu doped CdS was
biggest. Good agreement was found between crystallite size and photosensitivity. With further
development by using pair of dopants, this technique could produce better photosensitivity of
the CdS cell.
Keywords
conductive cells, photoconductive cells, Cu doped cadmium sulphide, photosensitivity